BFS17W 查看數據表（PDF） - Siemens AG

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BFS17W

NPN Silicon RF Transistor

Siemens AG 

BFS 17W

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

min.

typ.

AC Characteristics of any single Transistor

Transition frequency

fT

IC = 2 mA, VCE = 5 V, f = 200 MHz

1

IC = 25 mA, VCE = 5 V, f = 200 MHz

1.3

Collector-base capacitance

Ccb

VCB = 5 V, VBE = vbe = 0 , f = 1 MHz

-

Collector-emitter capacitance

Cce

VCE = 5 V, VBE = vbe = 0 , f = 1 MHz

-

Input capacitance

Cibo

VEB = 0.5 V, IC = 0 , f = 1 MHz

-

Output capacitance

Cobs

VCE = 5 V, VBE = vbe = 0 , f = 1 MHz

-

Noise figure

F

IC = 2 mA, VCE = 5 V, f = 800 MHz

ZS = 0 Ω

-

Transducer gain

|S21e|2

IC = 20 mA, VCE = 5 V, f = 500 MHz

ZS = 50 Ω

-

Linear output voltage

V01=V02

IC = 14 mA, VCE = 5 V, dim = 60 dB

f1 = 806 MHz, f2 = 810 MHz, ZS =ZL= 50 Ω

-

Third order intercept point

IP3

IC = 200 mA, VCE = 8 V, f = 900 MHz

ZS =ZL= 50 Ω

-

1.4

2.5

0.6

0.26

1.45

-

3.5

12.7

100

23

max.

-

-

0.8

-

-

1.5

5

-

-

-

Unit

GHz

pF

dB

mV

dBm

Semiconductor Group

3

Nov-28-1996

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