TK20E60W 查看數據表（PDF） - Toshiba

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产品描述 (功能)

生产厂家

TK20E60W

MOSFETs Silicon N-Channel MOS (TMOSⅣ)

Toshiba 

5. Thermal Characteristics

Characteristics

Channel-to-case thermal resistance

Channel-to-ambient thermal resistance

Note 1: Ensure that the channel temperature does not exceed 150.

Note 2: VDD = 90 V, Tch = 25 (initial), L = 14 mH, RG = 25 Ω, IAR = 5 A

TK20E60W

Symbol

Rth(ch-c)

Rth(ch-a)

Max

0.757

83.3

Unit

/W

Note: This transistor is sensitive to electrostatic discharge and should be handled with care.

2

2013-12-26

Rev.4.0

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