MMFT2N02EL 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
MMFT2N02EL Datasheet PDF : 10 Pages
| |||
MMFT2N02EL
Preferred Device
Power MOSFET
2 Amps, 20 Volts
N−Channel SOT−223
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. This device is also designed with
a low threshold voltage so it is fully enhanced with 5 Volts. This new
energy efficient device also offers a drain−to−source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, dc−dc converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. The device is housed in the SOT−223 package which is
designed for medium power surface mount applications.
• Silicon Gate for Fast Switching Speeds
• Low Drive Requirement to Interface Power Loads to Logic Level
ICs, VGS(th) = 2 Volts Max
• The SOT−223 Package can be Soldered Using Wave or Reflow. The
Formed Leads Absorb Thermal Stress During Soldering, Eliminating
the Possibility of Damage to the Die
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous
Drain Current − Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDS
20
Vdc
VGS
± 15
ID
1.6
Adc
IDM
6.4
PD
0.8 Watts
(Note 1.) 6.4 mW/°C
Operating and Storage Temperature
Range
TJ, Tstg −65 to
°C
150
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 10 V, VGS = 5 V, Peak
IL= 2 A, L = 0.2 mH, RG = 25 Ω)
THERMAL CHARACTERISTICS
Thermal Resistance −
Junction−to−Ambient (surface mounted)
EAS
RθJA
66
mJ
156
°C/W
Maximum Temperature for Soldering
Purposes,
Time in Solder Bath
260
°C
TL
10
Sec
1. Power rating when mounted on FR−4 glass epoxy printed circuit board using
recommended footprint.
http://onsemi.com
2 AMPERES
20 VOLTS
RDS(on) = 150 mW
N−Channel
D
G
S
MARKING
DIAGRAM
1
2
3
4 TO−261AA
CASE 318E
STYLE 3
2N02L
LWW
L
= Location Code
WW = Work Week
PIN ASSIGNMENT
4 Drain
123
Gate Drain Source
ORDERING INFORMATION
Device
Package
Shipping
MMFT2N02ELT1 SOT−223 1000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
1
August, 2006 − Rev. 5
Publication Order Number:
MMFT2N02EL/D
Share Link: 