MMFT2N02EL 查看數據表（PDF） - ON Semiconductor
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MMFT2N02EL Datasheet PDF : 10 Pages
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MMFT2N02EL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage, (VGS = 0, ID = 250 μA)
Zero Gate Voltage Drain Current, (VDS = 20 V, VGS = 0)
Gate−Body Leakage Current, (VGS = 15 V, VDS = 0)
ON CHARACTERISTICS
Gate Threshold Voltage, (VDS = VGS, ID = 1 mA)
Static Drain−to−Source On−Resistance, (VGS = 5 V, ID = 0.8 A)
Drain−to−Source On−Voltage, (VGS = 5 V, ID = 1.6 A)
Forward Transconductance, (VDS = 10 V, ID = 0.8 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 15 V,
VGS = 0,
f = 1 MHz)
SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 15 V, ID = 1.6 A
VGS = 5 V, RG = 50 ohms,
RGS = 25 ohms)
Total Gate Charge
Gate−Source Charge
Gate−Drain Charge
(VDS = 16 V, ID = 1.6 A,
VGS = 5 Vdc)
See Figures 15 and 16
SOURCE DRAIN DIODE CHARACTERISTICS (Note 1)
Forward On−Voltage
IS = 1.6 A, VGS = 0
Forward Turn−On Time
IS = 1.6 A, VGS = 0,
Reverse Recovery Time
dlS/dt = 400 A/μs,
VR = 16 V
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ton
trr
Min
Typ
Max
Unit
20
−
−
Vdc
−
−
10
μAdc
−
−
100
nAdc
1
−
2
Vdc
−
−
0.15
Ohms
−
−
0.32
Vdc
−
2.6
−
mhos
−
580
−
−
430
−
pF
−
250
−
−
16
−
−
73
−
ns
−
77
−
−
107
−
−
20
−
−
1.7
−
nC
−
6
−
−
0.9
−
Vdc
Limited by stray inductance
−
55
−
ns
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