MMDT4413 查看數據表（PDF） - Galaxy Semi-Conductor
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MMDT4413 Datasheet PDF : 5 Pages
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Production specification
Small Surface Mount Transistor
MMDT4413
ELECTRICAL CHARACTERISTICS NPN 4401 Section @ Ta=25℃ unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
Collector-base breakdown voltage IC=100μA,IE=0
Collector-emitter breakdown voltage IC=1mA,IB=0
Emitter-base breakdown voltage
IE=100μA,IC=0
collector cut-off current
VCB= 30V IE=0
collector cut-off current
VCE= 30V IE=0
emitter cut-off current
VCE= 5V IC=0
60
V
40
V
6
V
- 100 nA
- 100 nA
- 100 nA
hFE
DC current gain
VCE=1V,IC= 0.1mA
VCE=1V,IC=1mA
VCE=1V,IC=10mA
VCE=1V,IC=150mA
20
-
40
-
80
-
100 300
VCE(sat)
VBE(sat)
Cob
fT
td
tr
ts
tf
collector-emitter saturation voltage
base-emitter saturation voltage
Output capacitance
transition frequency
delay time
rise time
storage time
fall time
IC=150mA,IB =15mA
-
0.4 V
IC=500mA,IB =50mA
- 0.75 V
IC=150mA,IB =15mA
0.75 0.95 V
IC=500mA, IB =50mA
-
IE =0, VCB =5V; f =1MHz
-
IC=20mA,VCE=10V,f=100MHz 250
1.2 V
6.5 pF
- MHz
VCC=30V,VBE=2.0V
IC=150mA IB1=IB2=15mA
-
15 ns
-
20 ns
VCC=30V,IC=150mA
IB1=IB2=15mA
- 225 ns
-
30 ns
G028
Rev.A
www.gmicroelec.com
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