S1T_13 查看數據表（PDF） - Diotec Semiconductor Germany
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S1T_13 Datasheet PDF : 2 Pages
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S1A ... S1Y
120
[%]
100
80
60
40
20
IFAV
0
0 TT 50
100
150 [°C]
Rated forward current vs. temp. of the terminals
Zul. Richtstrom in Abh. v. d. Temp. der Terminals
102
[µA]
101
1
Tj = 125°C
Tj = 100°C
100
[%]
10
102
[A]
10
Tj = 125°C
Tj = 25°C
1
10-1
IF
10-2
30a-(1a-1.1v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
10-1
IR
Tj = 25°C
10-2
0
VRRM
40
60
80 100 [%]
Typ. instantaneous leakage current vs. rev. voltage
Typ. Sperrstrom (Augenblickswert) ü. Sperrspannung
25
[pF]
20
15
10
5
Cj
0
VR
[V]
Junction capacitance vs. reverse voltage (typical)
Sperrschichtkapazität in Abh. v.d. Sperrspg. (typ.)
ZthA
RthA
1 0.01 [s] 0.1
1
10
102 [tp] 103
Relative transient thermal impedance vs. pulse duration (typical)
Relativer transienter Wärmewiderstand über Impulsdauer (typisch)
102
[A]
10
îF
1
1
10
10 2
[n] 103
Peak forward surge current versus number of cycles at 50 Hz
Durchlaß-Spitzenstrom in Abh. von der Zahl der Halbwellen bei 50 Hz
2
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