2SB1120_15 查看數據表（PDF） - KEXIN Industrial

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产品描述 (功能)

生产厂家

2SB1120_15

PNP Transistors

KEXIN Industrial 

SMD Type

PNP Transistors

2SB1120

Transistors

■ Features

● Very small size making it easy to provide high

highdensity, small-sized hybrid IC’s.

● Low collector-to-emitter saturation voltage

● Large current capacity : IC=–2.5A, ICP=–5A.

1.70 0.1

0.42 0.1

0.46 0.1

1.Base

2.Collector

3.Emitter

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector current -Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature range

(Note.1)

Symbol

Rating

Unit

VCBO

-20

VCEO

-10

V

VEBO

-7

IC

-2.5

A

ICP

-5

0.5

PC

W

1.3

TJ

150

℃

Tstg

-55 to 150

Note.1: Mounted on ceramic board (250mm2 ×0.8mm)

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

DC current gain

Collector output capacitance

Transition frequency

Symbol

Test Conditions

VCBO Ic= -100 μA， IE=0

VCEO Ic= -1 mA， RBE=∞

VEBO IE= -100μA， IC=0

ICBO VCB= -16V , IE=0

IEBO VEB= -4V , IC=0

VCE(sat) IC=-1.5 A, IB=-150mA

VBE(sat) IC=-1.5 A, IB=-150mA

VCE= -2V, IC= -500 mA

hFE

VCE= -2V, IC= -3 A

Cob VCB = –10V, IE = 0, f = 1MHz

fT

VCE= -10V, IC= -50mA

Min Typ Max Unit

-20

-10

V

-7

-0.1

uA

-0.1

-0.25 -0.45

V

-1.2

100

560

70

70

pF

250

MHz

■ Classification of hfe(1)

Type

2SB1120-E

Range

100-200

Marking

BC E*

2SB1120-F

160-320

BC F*

2SB1120-G

280-560

BC G*

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