SFW/I9530 查看數據表（PDF） - Fairchild Semiconductor
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SFW/I9530 Datasheet PDF : 7 Pages
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P-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : - 15 V
- 10 V
- 8.0 V
101
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom : - 4.5V
100
10-1
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
-VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
1.0
0.8
0.6
VGS = -10 V
0.4
0.2
VGS = -20 V @ Note : TJ = 25 oC
0.0
0
7
14
21
28
35
42
-ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
1500
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
C iss
1000
C oss
500
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
100
101
-VDS , Drain-Source Voltage [V]
SFW/I9530
Fig 2. Transfer Characteristics
101
175 oC
100
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = -40 V
3. 250 µs Pulse Test
10-1
2
4
6
8
10
-VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
101
100
175 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
10
VDS = -20 V
VDS = -50 V
VDS = -80 V
5
@ Notes : ID =-10.5 A
0
0
5
10
15
20
25
30
35
QG , Total Gate Charge [nC]
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