A769 查看數據表（PDF） - SavantIC Semiconductor

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A769

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0

V(BR)CBO Collector-base breakdown voltage

IC=-1mA ,IE=0

VCEsat Collector-emitter saturation voltage IC=-3A; IB=-0.3A

VBEsat

Base-emitter saturation voltage

IC=-3A; IB=-0.3A

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE

DC current gain

IC=-1A ; VCE=-4V

fT

Transition frequency

IC=-0.5A ; VCE=-10V

Product Specification

2SA769

MIN TYP. MAX UNIT

-80

V

-80

V

-1.0

V

-1.5

V

-10

µA

-10

µA

60

240

10

MHz

2

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