BZX55B 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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BZX55B Datasheet PDF : 6 Pages
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Typical Characteristics
FIG1: Total Power Dissipation vs. Ambient Temperature
600
500
400
300
200
100
0
0
40
80
120
160 200
Tamb（℃）
FIG3:Typical Change of Working Voltage under
Operating Conditions at Tamb=25℃
1000
Tj=25℃
100
10
Iz=5mA
1
0
5
10
15
20
25
Vz(V)
FIG5: Tem perature Coefficient of Vz vs. Z-voltage
15
10
5
0
-5
0
10
20
30
40
50
Vz(V)
FIG2: Thermal Resistance vs. Lead Length
500
400
TL=constant
300
200
100
0
0
5
10
15
20
L(mm)
FIG4: Typical Change of W orking Voltage vs.
Junction Temperature
1.3
Vztn=Vzt/Vz(25℃ )
1.2
T K v z= 1 0 × 1 0-4/K
- 4× 1 0 -4/K
1.1
1.0
8 × 10 -4/K
6 × 10 -4/K
4 × 1 0 -4/K
2 × 1 0 -4/K
0
- 4× 1 0 -4/K
- 4× 1 0 -4/K
0.9
0.8
-60
0
60
120 180
240
Tj(℃ )
FIG6: Forward Current vs. Forward Voltage
100
10
T j= 2 5 ℃
1.0
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
VF(V)
High Diode Semiconductor
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