SF13G 查看數據表（PDF） - Diode Semiconductor Korea

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SF13G

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Diode Semiconductor Korea 

Diode Semiconductor Korea

SF11G --- SF16G

FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

50

10

N 1.

N 1.

(+)

25VDC

(approx)

(-)

D.U.T.

1

NONIN-

DUCTIVE

OSCILLOSCOPE

(NOTE 1)

PULSE

GENERATOR

(NOTE2)

NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.

JJJJJ2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .

trr

+0.5A

0

-0.25A

-1.0A

1cm

SET TIME BASE FOR 10 ns/cm

FIG.2 -- TYPICAL FORWARD CHARACTERISTIC

10

4.0

2.0

SF11G - SF14G

1.0

SF15G - SF16G

0.4

0.2

0.1

0.04

0.02

0.01

0

TJ=25

Pulse Width=300µs

0.4 0.8 1.2 1.6 2.0 2.4

INSTANTANEOUS FORWARD VOLTAGE, VOLTS

FIG.4 -- TYPICAL JUNCTION CAPACITANCE

40

20

SF11G - SF14G

10

4.0

SF15G- SF16G

2.0

1.0

0.4

0.2

0.10.1 0.2 0.4

TJ=25

f=1.0MHZ

1 24

10 20

40 100

REVERSE VOLTAGE,VOLTS

FIG.3 -- FORWARD DERATING CURVE z

2.0

Single Phase

Half Wave 60HZ

Resistive or

Inductive Load

0.375"(9.5mm)Lead Length

1.0

0

0 25 50 75 100 125 150 175

AMBIENT TEMPERATURE,

FIG.5 -- PEAK FORWARD SURGE CURRENT

40

30

25

8.3ms Single Half

Sine-Wave

20

15

10

5

0

1

5

10

50 100

NUMBER OF CYCLES AT 60Hz

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