BD242A 查看數據表（PDF） - Bourns, Inc
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BD242A Datasheet PDF : 5 Pages
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BD242, BD242A, BD242B, BD242C
PNP SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
V(BR)CEO breakdown voltage
Collector-emitter
ICES cut-off current
ICEO
IEBO
hFE
VCE(sat)
VBE
hfe
|hfe|
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
IC = -30 mA
(see Note 5)
VCE = -55 V
VCE = -70 V
VCE = -90 V
VCE = -115 V
VCE = -30 V
VCE = -60 V
VEB = -5 V
VCE = -4 V
VCE = -4 V
IB = -0.6 A
VCE = -4 V
VCE = -10 V
VCE = -10 V
IB = 0
VBE = 0
VBE = 0
VBE = 0
VBE = 0
IB = 0
IB = 0
IC = 0
IC = -1 A
IC = -3 A
IC = -3 A
IC = -3 A
IC = -0.5 A
IC = -0.5 A
BD242
-45
BD242A
-60
BD242B
-80
BD242C
-100
BD242
-0.2
BD242A
-0.2
BD242B
-0.2
BD242C
-0.2
BD242/242A
-0.3
BD242B/242C
-0.3
-1
25
(see Notes 5 and 6)
10
(see Notes 5 and 6)
-1.2
(see Notes 5 and 6)
-1.8
f = 1 kHz
20
f = 1 MHz
3
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
mA
mA
mA
V
V
thermal characteristics
RθJC
RθJA
PARAMETER
Junction to case thermal resistance
Junction to free air thermal resistance
MIN TYP MAX UNIT
3.125 °C/W
62.5 °C/W
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
TEST CONDITIONS †
ton Turn-on time
toff
Turn-off time
IC = -1 A
VBE(off) = 3.7 V
IB(on) = -0.1 A
RL = 20 Ω
IB(off) = 0.1 A
tp = 20 µs, dc ≤ 2%
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
MIN TYP MAX UNIT
0.2
µs
0.3
µs
PRODUCT INFORMATION
2
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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