ZDT717 查看數據表（PDF） - Zetex => Diodes
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ZDT717 Datasheet PDF : 3 Pages
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SM-8 DUAL PNP MEDIUM POWER
HIGH GAIN TRANSISTORS
ISSUE 1 - NOVEMBER 1995
ZDT717
C1
B1
C1
E1
C2
B2
C2
E2
PARTMARKING DETAIL T717
SM-8
(8 LEAD SOT223)
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Operating and Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
ICM
IC
Tj:Tstg
VALUE
-12
-12
-5
-10
-2.5
-55 to +150
UNIT
V
V
V
A
A
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
VALUE
UNIT
Total Power Dissipation at Tamb = 25°C*
Ptot
Any single die on
Both die on equally
2
W
2.5
W
Derate above 25°C*
Any single die on
Both die on equally
16
mW/ °C
20
mW/ °C
Thermal Resistance - Junction to Ambient*
Any single die on
Both die on equally
62.5
°C/ W
50
°C/ W
* The power which can be dissipated assuming the device is mounted in a typical manner
on a PCB with copper equal to 2 inches square.
3 - 348
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