MB05S 查看數據表（PDF） - MAKO SEMICONDUCTOR CO.,LIMITED
零件编号
产品描述 (功能)
生产厂家
MB05S
MAKO SEMICONDUCTOR CO.,LIMITED
MB05S Datasheet PDF : 2 Pages
| |||
MB05S
THRU
MB10S ited Features
• Surface Mount Package
• Glass Passivated Diode Construction
im • Moisture Resistant Epoxy Case
L • High Surge Current Capability
0.5Amp Single Phase
Glass Passivated
Bridge Rectifier
50 to 1000 Volts
., Maximum Ratings
o • Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
r C MCC
Catalog
to Number
c MB05S
MB1S
u MB2S
d MB4S
MB6S
n MB8S
o MB10S
Device
Marking
MB05S
MB1S
MB2S
MB4S
MB6S
MB8S
MB10S
Maximum
Rccurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
ic Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
m Current
IF(AV)
0.5A
0.8A
Note1 TA = 30°C
Note2 TA = 30°C
e Peak Forward Surge
IFSM
S Current
30A 8.3ms, half sine
MBS -1
∼-
E
∼+
C
A
K
J
G
H
L
BD
F
Notch in case
M
N
Maximum
Instantaneous
Forward Voltage
O Maximum DC
Reverse Current At
K Rated DC Blocking
A Voltage
VF
IR
1.0V
5 µA
IFM = 0.5A;
TA = 25°C
TA = 25°C
.252
.272
6.40
6.91
.017
.029
0.45
0.75
.090
.106
2.30
2.70
.004
.008
0.10
0.20
.021
.023
0.53
0.58
.055
.065
1.40
1.65
MTypical Junction
Capacitance
CJ
25pF Measured at
1.0MHz, VR=4.0V
-----
.200
-----
5.08
M
.040
.050
1.02
1.27
.008
.014
0.15
0.35
Note1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
Note2. On alum: substrate P.C.B with an rea of 0.8 x 0.8 x 0.25”
( 20 x 20 x 6.4mm ) mounte on 0.05 x 0.05 “( 13 x 13 mm )
solder pad.
*Pulse Test: Pulse Width 300µsec, Duty Cycle 1%
MAKO Semiconductor Co., Limited
http://www.makosemi.hk/
Share Link: