1N47 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
零件编号
产品描述 (功能)
生产厂家
1N47 Datasheet PDF : 5 Pages
| |||
Electrical Characteristics (TA=25℃ unless otherwise noted)
Part
Number
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4754A
1N4755A
1N4756A
1N4757A
1N4758A
1N4759A
1N4760A
1N4761A
1N4762A
1N4763A
1N4764A
Nominal Zener
voltage1)
VZ at IZT
V
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
Test
current
IZT
mA
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
9.5
8.5
7.5
7
6.5
6
5.5
5
4.5
4
3.7
3.3
3.0
2.8
2.5
Maximum dynamic impedance
ZZT at IZT ZZK at IZK
IZK
Ω
Ω
mA
10
400
1
10
400
1
9
400
1
9
400
1
8
500
1
7
550
1
5
600
1
2
700
1
3.5
700
1
4
700
0.5
4.5
700
0.5
5
700
0.5
7
700
0.25
8
700
0.25
9
700
0.25
10
700
0.25
14
700
0.25
16
700
0.25
20
750
0.25
22
750
0.25
23
750
0.25
25
750
0.25
35
750
0.25
40
1000
0.25
45
1000
0.25
50
1000
0.25
60
1000
0.25
70
1500
0.25
80
1500
0.25
95
1500
0.25
110
2000
0.25
125
2000
0.25
150
2000
0.25
175
2000
0.25
200
3000
0.25
250
3000
0.25
350
3000
0.25
Maximum reverse leakage current
IR
Test voltage VR
μA
V
100
1
100
1
50
1
10
1
10
1
10
1
10
2
10
3
10
4
10
5
10
6
10
7
10
7.6
5
8.4
5
9.1
5
9.9
5
11.4
5
12.2
5
13.7
5
15.2
5
16.7
5
18.2
5
20.6
5
22.8
5
25.1
5
27.4
5
29.7
5
32.7
5
35.8
5
38.8
5
42.6
5
47.1
5
51.7
5
56
5
62.2
5
69.2
5
76.0
Surge current3)
at TA=25℃ IR
mA
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
170
150
135
125
115
110
95
90
80
70
65
60
55
50
45
Maximum
regulator current2)
IZM
mA
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
34
30
27
25
23
22
19
18
16
14
13
12
11
10
9
Notes:
1) Based on dc-measurement at thermal equilibrium while maintaining the lead temperature (TL) at 30℃+1℃, 9.5 mm (3/8")
from the diode body
2) Valid provided that electrodes at a distance of 4 mm from case are kept at ambient temperature
3) tp = 10 ms
High Diode Semiconductor
2
Share Link: 