1N5818-E3(2007) 查看數據表（PDF） - Vishay Semiconductors
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1N5818-E3 Datasheet PDF : 5 Pages
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100
TJ = 125 °C
10
1
0.1
Pulse Width = 300 µs
1 % Duty Cycle
TJ = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
100
10
TJ = 125 °C
1
0.1
TJ = 75 °C
0.01
TJ = 25 °C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
10
0.1
1
10
Reverse Voltage (V)
1N5817
100
Figure 5. Typical Junction Capacitance
1N5817 thru 1N5819
Vishay General Semiconductor
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
0.1
1N5818 & 1N5819
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 7. Typical Transient Thermal Impedance
Document Number: 88525 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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