1N5817_08 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

1N5817_08

Schottky Rectifier, 1.0 A

Vishay Semiconductors 

1N5817

Vishay High Power Products Schottky Rectifier, 1.0 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Typical junction capacitance

Typical series inductance

Maximum voltage rate of change

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

CT

LS

dV/dt

TEST CONDITIONS

1A

TJ = 25 °C

3A

TJ = 25 °C

TJ = 100 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C

Measured lead to lead 5 mm from package body

Rated VR

TYP.

0.42

0.50

0.012

2.0

110

8.0

-

MAX.

0.45

0.75

1.0

10

-

-

10 000

UNITS

V

mA

pF

nH

V/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to lead

RthJL

DC operation

Lead length = 1/8"

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Without cooling fin

Approximate weight

Marking device

Case style DO-204AL (DO-41)

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 65 to 150

UNITS

°C

32

°C/W

100

0.33

g

0.012

oz.

1N5817

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93255

Revision: 06-Nov-08

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