1N5817TR 查看數據表（PDF） - Vishay Semiconductors
零件编号
产品描述 (功能)
生产厂家
1N5817TR Datasheet PDF : 6 Pages
| |||
1N5817
Schottky Rectifier, 1.0 A Vishay High Power Products
100
1000
Tj = 25˚C
100
10
10
0
5
10
15
20
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
150
1
Tj = 150˚C
Tj = 125˚C
Tj = 25˚C
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage Drop - V FM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
145
140
DC
Square wave
(D = 0.5)
135
see note (1)
130
0
0.4
0.8
1.2
1.6
Average Forward Current - I F(AV)(A)
Fig. 4 - Maximum Average Forward Current vs.
Allowable Lead Temperature
100
10 Tj = 150˚C
125˚C
1
100˚C
75˚C
0.1
50˚C
0.01
25˚C
0.001
0.5
D = 0.20
D = 0.25
0.4 D = 0.33
D = 0.50
D = 0.75
0.3
RMS Limit
0.2
DC
0.1
0.0001
0
5
10
15
20
Reverse Voltage - VR (V)
Fig. 2 - Typical Peak Reverse Current vs.
Reverse Voltage
0
0
0.4
0.8
1.2
1.6
Average Forward Current - I F(AV)(A)
Fig. 5 - Maximum Average Forward Dissipation vs.
Average Forward Current
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D)
Document Number: 93255
Revision: 06-Nov-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
Share Link: 