SSI1N60B 查看數據表（PDF） - Fairchild Semiconductor
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SSI1N60B Datasheet PDF : 9 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
100
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10-1
10-2
10-1
% Notes :
1. 250& s Pulse Test
2. TC = 25$
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
60
50
V = 10V
GS
40
V = 20V
30
GS
20
10
% Note : T = 25$
J
0
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
300
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
C
iss
100
Coss
% Notes :
C
rss
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
150oC
10-1
2
25oC
-55oC
% Notes :
1.
2.
V25DS0&=s40PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150$
25$
% Notes :
1. V = 0V
2. 25G0S& s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 120V
DS
10
VDS = 300V
8
V = 480V
DS
6
4
2
% Note : ID = 1.0 A
0
0
1
2
3
4
5
6
7
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. B, November 2001
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