TIP35C 查看數據表（PDF） - Tiger Electronic
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TIP35C Datasheet PDF : 1 Pages
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TIGER ELECTRONIC CO.,LTD
Product specification
Complementary Silicon High Power Ttransistors
TIP35C / TIP36C
DESCRIPTION
It is intented for use in power
amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 OC)
Parameter
Symbol Value Unit
Collector-Base Voltage
VCBO
100
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Dissipation at
Max. Operating Junction Temperature
Storage Temperature
VCEO
VEBO
IC
IB
Ptot
Tj
Tstg
100 V
5
V
25
A
5
A
125 W
150 oC
-55~150 oC
TO-3PN
ELECTRICAL CHARACTERISTICS ( Ta = 25 OC)
Parameter
Symbol
Test Conditions
Collector Cut-off Current
ICEO VCB=60V, IE=0
Emitter Cut-off Current
IEBO VEB=5V, IC=0
Collector-Emitter Sustaining Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
VCEO
hFE(1)
hFE(2)
VCE(sat)
VBE
IC=30mA, IB=0
VCE=4V, IC=1.5A
VCE=4V, IC=15A
IC=25A,IB=5A
VCE=4V,IC=15A
Transition Frequency
fT
VCE=5V,IC=1A
Min.
100
25
10
3
Typ. Max. Unit
1.0 mA
1.0 mA
V
60
4.0 V
2.0 V
MHz
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