MPS651 查看數據表（PDF） - Fairchild Semiconductor
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MPS651 Datasheet PDF : 3 Pages
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MPS651
Switching and Amplifier Applications
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
hFE3
hFE4
VCE (sat)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter- Base Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
VBE (sat)
VBE (on)
fT
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Band Width Product
IC=100µA, IE=0
IC=10mA, IB=0
IC=10µA, IC=0
VCB=80V, IE=0
VEB=4.0V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1.0A
VCE=2V, IC=2.0A
IC=1.0A, IB=100mA
IC=2.0A, IB=200mA
IC=1.0A, IB=100mA
VCE=2.0V, IC=1.0A
VCE=5.0V, IC=50mA,
f=100MHz
1
TO-92
1. Emitter 2. Base 3. Collector
Ratings
80
60
5
0.8
625
150
-55 ~ 150
Units
V
V
V
A
mW
°C
°C
Min.
80
60
5
75
75
75
40
75
Typ.
Max.
0.1
0.1
Units
V
V
V
µA
µA
300
mV
500
1.2
V
1.0
V
MHz
©2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
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