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DTA125TSA 查看數據表(PDF) - ROHM Semiconductor

零件编号
产品描述 (功能)
生产厂家
DTA125TSA
ROHM
ROHM Semiconductor ROHM
DTA125TSA Datasheet PDF : 3 Pages
1 2 3
Transistors
DTA125TUA / DTA125TKA / DTA125TSA
zPackage, marking, and packaging specifications
Part No.
DTA125TUA DTA125TKA
Package
UMT3
SMT3
Marking
9A
9A
Packaging code
T106
T146
Basic ordering unit (pieces)
3000
3000
DTA125TSA
SPT
TP
5000
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
50
50
5
100
Input resistance
Transition frequency
Transition frequency of the device.
R1
140
fT
Typ. Max.
0.5
0.5
0.3
250
600
200
260
250
Unit
V
V
V
µA
µA
V
k
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −50µA
VCB= −50V
VEB= −4V
IC= −0.5mA , IB= −0.05mA
IC= −1mA , VCE= −5V
VCE= −10V , IE=5mA , f=100MHz
zElectrical characteristics curves
1k
VCE=5V
500
Ta=100°C
Ta=25°C
200
100
Ta= −40°C
50
20
10
5
2
1
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain
vs. Collector current
1
IC/IB=10/1
500m
200m
100m
50m
20m
10m
5m
Ta=100°C
Ta=25°C
Ta= −40°C
2m
1m
10µ 20µ 50µ 100µ 200µ 500µ 1m 2m 5m 10m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2

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