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TLFGE1100B(2008) 查看數據表(PDF) - Toshiba

零件编号
产品描述 (功能)
生产厂家
TLFGE1100B
(Rev.:2008)
Toshiba
Toshiba Toshiba
TLFGE1100B Datasheet PDF : 15 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
TL(RE,SE,OE,YE,GE,FGE,PGE)1100B(T11)
Absolute Maximum Ratings (Ta = 25°C)
Part Number
TLRE1100B
TLSE1100B
TLOE1100B
TLYE1100B
TLGE1100B
TLFGE1100B
TLPGE1100B
Forward Current
IF (mA)
See Note 1
Reverse Voltage Power Dissipation
VR (V)
PD (mW)
50
4
120
Operation
Temperature
Topr (°C)
40 to 100
Storage
Temperature
Tstg (°C)
40 to 100
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Forward current derating
IF – Ta
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C))
Electrical Characteristics (Ta = 25°C)
Part Number
TLRE1100B
TLSE1100B
TLOE1100B
TLYE1100B
TLGE1100B
TLFGE1100B
TLPGE1100B
Unit
Forward Voltage VF
Min Typ. Max
IF
1.6
1.9
2.4
1.6
1.9
2.4
1.6
2.0
2.4
1.6
2.0
2.4
20
1.6
2.0
2.4
1.6
2.0
2.4
1.6
2.1
2.4
V
mA
Reverse Current
IR
Max
VR
10
4
μA
V
2
2008-08-05

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