SM5817 查看數據表（PDF） - SUNMATE electronic Co., LTD
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SM5817 Datasheet PDF : 2 Pages
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Features
· Metal-Semiconductor junction with gard ring
· Epitaxial construction
· Low forward voltage drop
· High current capability
· The plastic material carries UL recognition 94V-0
· For use in low vlotage, high frequency inverters,
ree wheeling, and polarity protection applications
Mechanical Data
· Case Molded Plastic
· Polarity: lndicated by cathode band
· Weight: 0.002 ounces,0.064 grams
SM5817-SM5819
1.0A Surface Mount Schottky Barrier Rectifiers
B
A
C
D
J
H
G
E
SMA
Dim Min Max
A
2.29 2.92
B
4.00 4.60
C
1.27 1.63
D
0.15 0.31
E
4.80 5.59
G
0.10 0.20
H
0.76 1.52
J
2.01 2.62
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
@TA =75 ℃
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
VRMS
VDC
I(AV)
IFSM
VF
Maximum Forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current
@TJ=25℃
IR
at Rated DC Bolcking Voltage
@TJ=100℃
Typical Junction Capacitance (Note1)
CJ
Typical Thermal Resistance (Note2)
R JA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
SM5817
20
14
20
0.450
0.750
SM5818
30
21
30
1.0
40
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
SM5819
40
28
40
0.600
0.900
UNIT
V
V
V
A
A
V
V
mA
pF
℃/W
℃
℃
1 of 2
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