SMBT3906U(2012) 查看數據表（PDF） - Infineon Technologies

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SMBT3906U
(Rev.:2012)

PNP Silicon Switching Transistors

Infineon Technologies 

PNP Silicon Switching Transistors

• High DC current gain: 0.1 mA to 100 mA

• Low collector-emitter saturation voltage

• For SMBT3906S and SMBT3906U:

Two (galvanic) internal isolated transistor

with good matching in one package

• Complementary types:

SMBT3904...MMBT3904 (NPN)

• SMBT3906S/ U: for orientation in reel

see package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

SMBT3906...MMBT3906

Type

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

Marking

Pin Configuration

Package

s2A 1=B 2=E 3=C -

-

-

SOT23

s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

s2A 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Maximum Ratings

Parameter

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation-

TS ≤ 71°C, SOT23, MMBT3906

TS ≤ 115°C, SOT363, MMBT3906S

TS ≤ 107°C, SC74, MMBT3906U

Junction temperature

Storage temperature

Symbol

VCEO

VCBO

VEBO

IC

Ptot

Tj

Tstg

Value

Unit

40

V

40

6

200

mA

mW

330

250

330

150

°C

-65 ... 150

1

2012-08-21

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