SMBT3906U(2012) 查看數據表（PDF） - Infineon Technologies

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SMBT3906U
(Rev.:2012)

PNP Silicon Switching Transistors

Infineon Technologies 

SMBT3906...MMBT3906

Thermal Resistance

Parameter

Junction - soldering point1)

SMBT3906/ MMBT3906

SMBT3906S

SMBT3906U

Symbol

RthJS

Value

Unit

mW

≤ 240

≤ 140

≤ 130

1For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

V(BR)CEO 40

-

-

IC = 1 mA, IB = 0

Collector-base breakdown voltage

V(BR)CBO 40

-

-

IC = 10 µA, IE = 0

Emitter-base breakdown voltage

V(BR)EBO 6

-

-

IE = 10 µA, IC = 0

Collector-base cutoff current

ICBO

-

-

50

VCB = 30 V, IE = 0

DC current gain1)

hFE

IC = 100 µA, VCE = 1 V

60

-

-

IC = 1 mA, VCE = 1 V

80

-

-

IC = 10 mA, VCE = 1 V

100

-

300

IC = 50 mA, VCE = 1 V

60

-

-

IC = 100 mA, VCE = 1 V

30

-

-

Unit

V

nA

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

Base emitter saturation voltage1)

IC = 10 mA, IB = 1 mA

IC = 50 mA, IB = 5 mA

VCEsat

V

-

- 0.25

-

-

0.4

VBEsat

0.65 - 0.85

-

- 0.95

1Pulse test: t < 300µs; D < 2%

2

2012-08-21

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