MMBT3906 查看數據表（PDF） - TAITRON Components Incorporated
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MMBT3906 Datasheet PDF : 4 Pages
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SMD General Purpose Transistor (PNP)
MMBT3906
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Description
hFE*
D.C. Current Gain
-V(BR)CBO Collector-Base Breakdown Voltage
-V(BR)CEO* Collector-Emitter Breakdown Voltage
-V(BR)EBO* Emitter-Base Breakdown Voltage
-VCE(sat)* Collector-Emitter Saturation Voltage
-VBE(sat)* Base-Emitter Saturation Voltage
-ICEV
-IEBV
fT
CCBO
CEBO
Collector-Emitter Cut-off Current
Emitter-Base Cut-off Current
Current Gain-Bandwidth Product
Collector-Base Capacitance
Emitter-Base Capacitance
NF
Noise Figure
hfe
Small Signal Current Gain
td
Delay Time (see Fig 1)
tr
Rise Time (see Fig 1)
ts
Storage Time (see Fig 2)
tf
Fall Time (see Fig 2)
MMBT3906
Min.
Max.
60
-
80
-
100
300
60
-
30
-
40
40
-
5.0
-
-
0.25
-
0.4
0.65
0.85
-
0.95
-
50
-
50
250
-
-
4.5
-
10
-
4.0
100
400
-
35
-
35
-
225
-
75
Unit
V
V
V
V
V
nA
nA
MHz
pF
pF
dB
nS
Conditions
-VCE=1V, -IC=0.1mA
-VCE=1V, -IC=1mA
-VCE=1V, -IC=10mA
-VCE=1V, -IC=50mA
-VCE=1V, -IC=100mA
-IC=10µA, IE=0
-IC=1mA, IB=0
-IE=10µA, IC=0
-IC=10mA, -IB=1mA
-IC=50mA, -IB=5mA
-IC=10mA, -IB=1mA
-IC=50mA, -IB=5mA
-VEB=3V, -VCE=30V
-VEB=3V, -VCE=30V
-VCE=20V, -IC=10mA,
f=100MHz
-VCB=5V, IE=0,
f=100KHz
-VEB=0.5V, IC=0
f=100KHz
-VCE=5V, -IC=100µA,
RG=1KΩ,
f=10Hz to 15.7kHz
-VCE=10V, -IC=1mA
f=1KHz
-IB1=1mA, -IC=10mA
-IB1=1mA, -IC=10mA
IB1=-IB2=1mA, -IC=10mA
IB1=-IB2=1mA, -IC=10mA
Note: *Pulse Test: Pulse Width≤ 300µs, Duty Cycle ≤2.0%
www.taitroncomponents.com
Rev. A/AH 2008-05-06
Page 2 of 4
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