2N4126(1997) 查看數據表（PDF） - Fairchild Semiconductor
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2N4126 Datasheet PDF : 2 Pages
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Discrete POWER & Signal
Technologies
2N4126
MMBT4126
C
C
BE
TO-92
SOT-23
Mark: ZF
E
B
PNP General Purpose Amplifier
This device is designed for general purpose amplifier and switching
applications at collector currents to 10 µA as a switch and to 100
mA as an amplifier. Sourced from Process 66. See 2N3906 for
characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
25
VEBO
Emitter-Base Voltage
4.0
IC
Collector Current - Continuous
200
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics
TA= 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
2N4126
625
5.0
83.3
200
*MMBT4126
350
2.8
357
Units
mW
mW/°C
°C/W
°C/W
© 1997 Fairchild Semiconductor Corporation
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