HBD678 查看數據表（PDF） - Hi-Sincerity Microelectronics
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HBD678 Datasheet PDF : 2 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6625-A
Issued Date : 1994.10.04
Revised Date : 2000.10.01
Page No. : 1/2
HBD678
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HBD678 is designed for use as output devices in
complementary general purpose amplifier applications.
Features
• High Current Gain
• Monolithic Constructor
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature ............................................................................................ -50 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) .................................................................................... 40 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage ...................................................................................... 60 V
BVCEO Collector to Emitter Voltage................................................................................... 60 V
BVEBO Emitter to Base Voltage ........................................................................................... 5 V
IC Collector Current .............................................................................................................. 4 A
IB Base Current .................................................................................................................... 1 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
BVCBO
60
-
-
BVCEO
60
-
-
BVEBO
5
-
-
ICEO
-
-
200
ICBO
-
-
200
IEBO
-
-
2
*VCE(sat)
-
-
2.5
*VBE(on)
-
-
2.5
*hFE
750
-
-
Unit
Test Conditions
V
IC=1mA
V
IC=50mA
V
IE=1mA
uA VCB=30V
uA VCB=60V
mA VBE=5V
V
IC=1.5A, IB=30mA
V
IC=1.5A, VCE=3V
IC=1.5A, VCE=3V
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
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