2N6764 查看數據表（PDF） - Microsemi Corporation

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产品描述 (功能)

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2N6764

N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

Microsemi Corporation 

2N6764, 2N6766, 2N6768 and 2N6770

NOT ES:

1. Derate linearly by 1.2 W/ºC for T C > +25 ºC.

2. The following formula derives the maximum theoretical ID limit. ID is limited by package and internal wires and may also be limited by

pin diameter:

3. IDM = 4 x ID1 as calculated in note 2.

MECHANICAL and PACKAGING

• CASE: TO-3 metal can.

• TERMINALS: Solder dipped (Sn63/Pb37) over nickel plated alloy 52. RoHS compliant matte-tin plating is also available on

commercial grade only.

• MARKING: Manufacturer's ID, part number, date code.

• WEIGHT: Approximately 12.7 grams.

• See Package Dimensions on last page.

Reliability Level

JAN = JAN Level

JANTX = JANTX Level

JANTXV = JANTXV Level

Blank = Commercial

JEDEC type number

(see Electrical Characteristics

table)

PART NOMENCLATURE

JAN 2N6764 (e3)

RoHS Compliance

e3 = RoHS compliant (available

on commercial grade only)

Blank = non-RoHS compliant

Symbol

di/dt

IF

RG

V DD

V DS

V GS

SYMBOLS & DEFINITIONS

Definition

Rate of change of diode current while in reverse-recovery mode, recorded as maximum value.

Forward current

Gate drive impedance

Drain supply voltage

Drain source voltage, dc

Gate source voltage, dc

T4-LDS-0101, Rev. 3 (121466)

©2012 Microsemi Corporation

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