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2N6764 查看數據表（PDF） - Microsemi Corporation

零件编号
产品描述 (功能)
生产厂家
2N6764
N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543
Microsemi
Microsemi Corporation Microsemi
2N6764 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
2N6764, 2N6766, 2N6768 and 2N6770
ELECTRICAL CHARACTERISTICS @ TA = +25 °C, unless otherwise noted (continued)
DYNAMIC CHARACTERISTICS
Parameters / Test Conditions
Gate Charge:
On-State Gate Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
Gate to Source Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
Gate to Drain Charge
VGS = 10 V, ID = 38.0 A, VDS = 50 V
VGS = 10 V, ID = 30.0 A, VDS = 100 V
VGS = 10 V, ID = 14.0 A, VDS = 200 V
VGS = 10 V, ID = 12.0 A, VDS = 250 V
Symbol Min. Max. Unit
2N6764
2N6766
2N6768
2N6770
Q g(on)
2N6764
2N6766
2N6768
Q gs
2N6770
2N6764
2N6766
2N6768
Q gd
2N6770
125
115
110
nC
120
22
22
18
nC
19
65
60
65
nC
70
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Turn-on delay time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Rise time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Turn-off delay time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Fall time
ID = 38.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 50 V
ID = 30.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 100 V
ID = 14.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 200 V
ID = 12.0 A, VGS = 10 V, RG = 2.35 Ω, VDD = 250 V
Diode Reverse Recovery Time
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 38.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 30.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 14.0 A
di/dt = 100 A/µs, VDD ≤ 30 V, ID = 12.0 A
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
2N6764
2N6766
2N6768
2N6770
Symbol
t d(on)
tr
t d(off)
tf
t rr
Min.
Max. Unit
35
ns
190
ns
170
ns
130
ns
500
950
1200
ns
1600
T4-LDS-0101, Rev. 3 (121466)
©2012 Microsemi Corporation
Page 4 of 9

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