BD240B 查看數據表（PDF） - Power Innovations

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产品描述 (功能)

生产厂家

BD240B

PNP SILICON POWER TRANSISTORS

Power Innovations 

BD240, BD240A, BD240B, BD240C

PNP SILICON POWER TRANSISTORS

JUNE 1973 - REVISED MARCH 1997

TYPICAL CHARACTERISTICS

1000

TYPICAL DC CURRENT GAIN

vs

COLLECTOR CURRENT

TCS632AG

VCE = -4 V

tp = 300 µs, duty cycle < 2%

TC = 25°C

TC = 80°C

COLLECTOR-EMITTER SATURATION VOLTAGE

vs

BASE CURRENT

TCS632AE

-10

IC = -100 mA

IC = -300 mA

IC = -1 A

-1·0

100

-0·1

10

-0·01

-0·1

IC - Collector Current - A

Figure 1.

-0·01

-1·0

-0·1

-1·0

-10

-100

IB - Base Current - mA

Figure 2.

-1000

BASE-EMITTER VOLTAGE

vs

COLLECTOR CURRENT

-1·0

TCS632AF

VCE = -4 V

TC = 25°C

-0·9

-0·8

-0·7

-0·6

-0·5

-0·01

-0·1

-1·0

IC - Collector Current - A

Figure 3.

PRODUCT INFORMATION

3

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