A940 查看數據表（PDF） - Jiangsu Changjiang Electronics Technology Co., Ltd

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A940

TO-220-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220-3L Plastic-Encapsulate Transistors

2SA940 TRANSISTOR (PNP)

FEATURES

z Wide Safe Operating Area.

z Complementary to 2SC2703

TO-220-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Paramenter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Value

Unit

-150

V

-150

V

-5

V

-1.5

A

1.5

W

150

℃

-55-150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Symbol

Test conditions

V(BR)CBO IC =-100μA, IE=0

V(BR)CEO IC =-1mA, IB=0

V(BR)EBO IE=-100μA, IC=0

ICBO

VCB=-120V, IE=0

IEBO

VEB=-5V, IC=0

hFE

VCE=-10V, IC=-0.5A

VCE(sat) IC=-0.5A, IB=-50mA

VBE

VCE=-10V, IC=-0.5A

fT

VCE=-10V, IC=-0.5A

Cob

VCB=-10V, IE=0, f=1MHz

Min

-150

-150

-5

40

-0.65

Typ Max Unit

V

V

V

-10

μA

-10

μA

140

-1.5

V

-0.85 V

4

MHz

55

pF

www.cj-elec.com

1

B,Nov,2014

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