2SA940 查看數據表（PDF） - Inchange Semiconductor
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2SA940 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA940
DESCRIPTION
·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min)
·DC Current Gain
: hFE= 40-140@ IC= -0.5A
·Complement to Type 2SC2073
APPLICATIONS
·Designed for use in general purpose power amplifier ,
vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
Total Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
-150
V
-150
V
-5
V
-1.5
A
-3.0
A
25
W
150
℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX
5.0
UNIT
℃/W
isc Website：www.iscsemi.cn
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