2SB817E 查看數據表（PDF） - Inchange Semiconductor

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2SB817E

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB817E

DESCRIPTION

··Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -140V(Min)

·Good Linearity of hFE

·High Current Capability

·Wide Area of Safe Operation

·Complement to Type 2SD1047E

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·Designed for audio frequency amplifier output

stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VCBO

Collector-Base Voltage

-160

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-12

A

ICP

Collector Current-Pulse

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

-15

A

100

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc website： www.iscsemi.com

isc & iscsemi is registered trademark

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