B817E 查看數據表（PDF） - Inchange Semiconductor

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B817E

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

INCHANGE Semiconductor

2SB817E

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; RBE=∞

-140

V

V(BR)CBO Collector-Base Breakdown Voltage

IC= -5mA; IE= 0

-160

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; IC= 0

-6

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A

-2.5 V

VBE(on) Base -Emitter On Voltage

IC= -5A ; VCE= -5V

-1.5 V

ICBO

Collector Cutoff Current

VCB= -160V ; IE=0

-100 μA

IEBO

Emitter Cutoff Current

VEB= -4V; IC=0

-100 μA

hFE-1

DC Current Gain

IC= -1A ; VCE= -5V

100

200

hFE-2

DC Current Gain

IC= -5A ; VCE= -5V

35

COB

Output Capacitance

IE=0 ; VCB= -10V;ftest= 1.0MHz

210

pF

fT

Current-Gain—Bandwidth Product

IC=-1A ; VCE= -5V

15

MHz

Switching times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

IC= -1A ,RL= 20Ω,

IB1= -IB2= -0.1A,VCC=-20V

0.25

μs

1.61

μs

0.53

μs

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