FDC2512 查看數據表（PDF） - ON Semiconductor
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FDC2512 Datasheet PDF : 6 Pages
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Typical Characteristics
10
ID = 1.4A
8
6
VDS = 50V
75V
100V
4
2
0
0
1
2
3
4
5
6
7
8
9
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
10
RDS(ON) LIMIT
1
0.1
100µs
1ms
10ms
100ms
1s
DC
0.01
0.001
0.1
VGS = 10V
SINGLE PULSE
RθJA = 156oC/W
TA = 25oC
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
1000
Figure 9. Maximum Safe Operating Area.
500
400
CISS
300
f = 1MHz
VGS = 0 V
200
100
COSS
CRSS
0
0
25
50
75
100
125
150
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE
RθJA = 156°C/W
30
TA = 25°C
20
10
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
0.2
0.1
0.1
0.05
0.01
0.0001
0.02
0.01
0.001
SINGLE PULSE
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) + RθJA
RθJA = 156°C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
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4
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