FDPF10N60ZUT_13 查看數據表（PDF） - Fairchild Semiconductor
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FDPF10N60ZUT_13 Datasheet PDF : 8 Pages
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March 2013
FDPF10N60ZUT
N-Channel UniFETTM II Ultra FRFETTM MOSFET
600 V, 9 A, 0.8
Features
• RDS(on) = 650 m (Typ.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on planar stripe and DMOS technol-
ogy. This MOSFET is tailored to reduce on-state resistance, and
to provide better switching performance and higher avalanche
energy strength. UniFETTM II Ultra FRFETTM MOSFET has
much superior body diode reverse recovery performance. Its trr is
less than 50nsec and the reverse dv/dt immunity is 20V/nsec
while normal planar MOSFETs have over 200nsec and 4.5V/
nsec respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of the
MOSFET’s body diode. This device family is suitable for switch-
ing power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
S
FDPF10N60ZUT
600
±30
9*
5.4*
36*
100
9
18
20
42
0.3
-55 to +150
300
FDPF10N60ZUT
3.0
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2009 Fairchild Semiconductor Corporation
1
FDPF10N60ZUT Rev. C0
www.fairchildsemi.com
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