FDPF10N60ZUT_13 查看數據表（PDF） - Fairchild Semiconductor
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FDPF10N60ZUT_13 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Device Marking
FDPF10N60ZUT
Device
FDPF10N60ZUT
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TJ = 25oC
600
ID = 250A, Referenced to 25oC
-
VDS = 600V, VGS = 0V
-
VDS = 480V, TC = 125oC
-
VGS = ±30V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 4.5A
-
gFS
Forward Transconductance
VDS = 40V, ID = 4.5A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 480V, ID = 10A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300V, ID = 10A
RG = 25 , VGS = 10V
-
-
-
(Note 4)
-
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 10A
-
trr
Reverse Recovery Time
VGS = 0V, ISD = 10A
-
Qrr
Reverse Recovery Charge
dIF/dt = 100A/s
-
Typ.
-
0.8
-
-
-
-
0.65
12.5
1490
230
15
31
8
12
25
40
95
60
-
-
-
45
52
Max. Unit
-
V
-
V/oC
25
A
250
±10 A
5.0
V
0.8
-
S
1980 pF
240 pF
25
pF
40
nC
-
nC
-
nC
60
ns
90
ns
200
ns
130
ns
9
A
36
A
1.6
V
-
ns
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 2mH, IAS = 10A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 10A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2009 Fairchild Semiconductor Corporation
2
FDPF10N60ZUT Rev. C0
www.fairchildsemi.com
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