Philips Semiconductors
860 MHz, 18.5 dB push-pull amplifier
Product specification
BGY885A
Table 4 Bandwidth 40 to 550 MHz; VB = 24 V; Tmb = 30 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
Gp
power gain
SL
slope cable equivalent
FL
flatness of frequency response
S11
input return losses
S22
output return losses
S21
CTB
Xmod
CSO
d2
Vo
F
Itot
phase response
composite triple beat
cross modulation
composite second order
distortion
second order distortion
output voltage
noise figure
total current consumption (DC)
CONDITIONS
f = 50 MHz
f = 550 MHz
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
77 channels flat; Vo = 44 dBmV;
measured at 547.25 MHz
77 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
77 channels flat; Vo = 44 dBmV;
measured at 548.5 MHz
note 1
dim = −60 dB; note 2
see Table 1
note 3
MIN.
18
18.5
0
−
20
18.5
17
16
20
18.5
17
16
−45
−
TYP.
18.5
−
−
−
31
30
27.5
25
29
27.5
24
21
−
−61
MAX.
19
−
1.5
±0.3
−
−
−
−
−
−
−
−
+45
−60
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
−
−61 −60 dB
−
−69 −60 dB
−
−
−72 dB
62
−
−
dBmV
−
−
−
dB
−
225 240 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 548.5 MHz.
2. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo;
fq = 547.25 MHz; Vq = Vo −6 dB;
fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 22
6