1N4933G 查看數據表（PDF） - Daesan Electronics Corp.

零件编号

产品描述 (功能)

生产厂家

1N4933G

CURRENT 1.0 Ampere VOLTAGE 50 to 600 Volts

Daesan Electronics Corp. 

1N4933G THRU 1N4937G

Features

· Fast switching

· Low leakage current

· Low forward voltage drop

· High current capability

· Glass passivated junction

· High reliability capability

CURRENT 1.0 Ampere

VOLTAGE 50 to 600 Volts

DO-41

0.107(2.7)

0.080(2.0)

DIA.

1.0(25.4)

MIN.

Mechanical Data

· Case : JEDEC DO-41 molded plastic body

· Terminals : Plated axial lead solderable per MIL-STD-750,

method 2026

· Polarity : Color band denotes cathode end

· Mounting Position : Any

· Weight : 0.012 ounce, 0.34 gram

0.205(5.2)

0.166(4.2)

0.034(0.9)

0.028(0.7)

DIA.

1.0(25.4)

MIN.

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive

load. For capacitive load, derate by 20%)

Symbols 1N4933G 1N4934G 1N4935G 1N4936G 1N4937G

Maximum recurrent peak reverse voltage

Maximum RMS voltage

VRRM

50

100

200

400

600

VRMS

35

70

140

280

420

Maximum DC blocking voltage

VDC

50

100

200

400

600

Maximum average forward rectified current

0.375"(9.5mm) lead length at TA=75℃

I(AV)

1.0

Peak forward surge current 8.3ms single

half sine-wave superimposed on rated load

IFSM

30.0

(JEDEC method) at TA=55℃

Maximum instantaneous forward voltage

at 1.0A

VF

1.2

Maximum DC reverse current at rated DC

blocking voltage

IR

Maximum full load reverse current full cycle

average. 0.375"(9.5mm) lead length at

TL=55℃

Maximum reverse recovery time (Note 1)

Trr

Typical junction capacitance (Note 2)

CJ

Operating junction and storage

TJ

temperature range

TSTG

5.0

100

150

15.0

-65 to +175

Notes:

(1) Test conditions: IF=1.0A, VR=30V

(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.

Units

Volts

Volts

Volts

Amp

Amps

Volts

μA

ns

pF

℃

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