ZVP4525G 查看數據表（PDF） - Diodes Incorporated.

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ZVP4525G

250V P-CHANNEL ENHANCEMENT MODE MOSFET

Diodes Incorporated. 

ZVP4525G

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage

Gate-source threshold voltage

Static drain-source on-state resistance (1)

Forward transconductance (3)

DYNAMIC (3)

V(BR)DSS -250

IDSS

IGSS

VGS(th) -0.8

RDS(on)

gfs

80

-285

-30

±1

-1.5

10

13

200

V

-500 nA

±100 nA

-2.0 V

14

Ω

18

Ω

mS

ID=-1mA, VGS=0V

VDS=-250V, VGS=0V

VGS=±40V, VDS=0V

ID=-1mA, VDS= VGS

VGS=-10V, ID=-200mA

VGS=-3.5V,

ID=-100mA

VDS=-10V,ID=-0.15A

Input capacitance

Output capacitance

Reverse transfer capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

73

12.8

3.91

pF

VDS=-25 V, VGS=0V,

pF f=1MHz

pF

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate drain charge

SOURCE-DRAIN DIODE

Diode forward voltage (1)

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

1.53

3.78

17.5

7.85

2.45

0.22

0.45

Reverse recovery time (3)

trr

Reverse recovery charge (3)

Qrr

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

205

21

ns

ns

ns

ns

3.45 nC

0.31 nC

0.63 nC

VDD =-30V, ID=-200mA

RG=50Ω, VGS=-10V

(refer to test circuit)

VDS=-25V,VGS=-10V,

ID=-200mA(refer to

test circuit)

0.97 V

290 ns

29

nC

Tj=25°C, IS=-200mA,

VGS=0V

Tj=25°C, IF=-200mA,

di/dt= 100A/µs

SEMICONDUCTORS

4

ISSUE 4 - JUNE 2004

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