BUZ11_99 查看數據表（PDF） - Fairchild Semiconductor
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BUZ11_99 Datasheet PDF : 6 Pages
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BUZ11
Typical Performance Curves Unless Otherwise Specified (Continued)
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 25V
15
10
5
0
0
1
2
3
4
5
6
7
8
VGS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
0.15
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 5V
0.10
0.05
5.5V
6V
6.5V
7V
7.5V
8V
9V
10V
20V
0
0
20
40
60
ID, DRAIN CURRENT (A)
FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
0.08
4
PULSE DURATION = 80µs
VDS = VGS
DUTY CYCLE = 0.5% MAX
ID = 1mA
ID = 15A, VGS = 10V
0.06
3
0.04
2
0.02
1
0
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs
JUNCTION TEMPERATURE
101
100
CISS
COSS
CRSS
10-1
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
10-2
0
10
20
30
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
0
-50
0
50
100
150
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. GATE THRESHOLD VOLTAGE vs JUNCTION
TEMPERATURE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS = 25V
8
TJ = 25oC
6
4
2
0
0
5
10
15
20
ID, DRAIN CURRENT (A)
FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT
©2001 Fairchild Semiconductor Corporation
BUZ1 Rev. A
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