1N5818_11 查看數據表（PDF） - STMicroelectronics
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1N5818_11 Datasheet PDF : 7 Pages
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1N5817, 1N5818, 1N5819
Characteristics
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(1N5817/1N5818)
Average forward power dissipation
versus average forward current
(1N5819)
PF(av)(W)
0.6
0.5
d = 0.05
0.4
0.3
0.2
d = 0.1
d = 0.2
d = 0.5
d=1
T
PF(av)(W)
0.7
0.6
d = 0.05
0.5
0.4
0.3
0.2
d = 0.1
d = 0.2
d = 0.5
d=1
T
0.1
IF(av) (A)
d=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
0.1
IF(av) (A)
d=tp/T
tp
0.0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Figure 3.
Average forward current versus
ambient temperature
(δ = 0.5) (1N5817/1N5818)
IF(av)(A)
1.2
1.0
Rth(j-a)=Rth(j-l)=45°C/W
Figure 4.
Average forward current versus
ambient temperature
(δ = 0.5) (1N5819)
IF(av)(A)
1.2
1.0
Rth(j-a)=Rth(j-l)=45°C/W
0.8
Rth(j-a)=100°C/W
0.8
Rth(j-a)=100°C/W
0.6
0.6
0.4
T
0.4
T
0.2
0.2
d=tp/T
tp
Tamb(°C)
d=tp/T
tp
Tamb(°C)
0.0
0
0.0
25
50
75
100
125
150
0
25
50
75
100
125
150
Figure 5. Normalized avalanche power
derating versus pulse duration
Figure 6.
Normalized avalanche power
derating versus junction
temperature
PARM(tp)
PARM(1 µs)
1
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 6262 Rev 5
3/7
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