1N5818_11 查看數據表（PDF） - STMicroelectronics
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1N5818_11 Datasheet PDF : 7 Pages
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Characteristics
1N5817, 1N5818, 1N5819
Figure 7.
Non repetitive surge peak forward Figure 8.
current versus overload duration
(maximum values) (1N5817/1N5818)
Non repetitive surge peak forward
current versus overload duration
(maximum values) (1N5819)
IM(A)
10
9
8
7
6
5
4
3
2 IM
1
t
d=0.5
0
1E-3
t(s)
1E-2
1E-1
IM(A)
8
7
6
Ta=25°C
5
Ta=75°C
4
3
Ta=100°C
2
IM
1
t
d=0.5
0
1E+0 1E-3
1E-2
t(s)
1E-1
Ta=25°C
Ta=75°C
Ta=100°C
1E+0
Figure 9.
Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values)
Zth(j-a)/Rth(j-a)
1.0
(epoxy printed circuit board,
e(Cu) = 35 mm, recommended pad layout)
0.8
0.6
δ = 0.5
0.4
C(pF)
500
200
100
50
1N5817
1N5819
F=1MHz
Tj=25°C
1N5818
δ = 0.2
0.2 δ = 0.1
T
20
Single pulse
tp(s)
δ=tp/T
tp
0.0
10
1E-1
1E+0
1E+1
1E+2
1E+3
1
2
VR(V)
5
10
20
40
Figure 11. Reverse leakage current versus
reverse voltage applied (typical
values) (1N5817/1N5818)
IR(mA)
1E+1
1E+0
Tj=125°C
1N5817
1N5818
1E-1
Tj=100°C
Figure 12. Reverse leakage current versus
reverse voltage applied (typical
values) (1N5819)
IR(mA)
1E+1
1E+0
Tj=125°C
1E-1
Tj=100°C
1E-2
1E-2
Tj=25°C
Tj=25°C
1E-3
0
VR(V)
VR(V)
1E-3
5
10
15
20
25
30
0
5 10 15 20
30 35 40
4/7
Doc ID 6262 Rev 5
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