1N5818 查看數據表（PDF） - Mospec Semiconductor
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1N5818 Datasheet PDF : 2 Pages
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MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Molybdenum barrier metal.
These state-of-the-art geometry features epitaxial construction with oxide
passivation and metal overlay contact. Ideally suited for low voltage, high
frequency rectification, or as free wheeling and polarity protection diodes.
＊Low Forward Voltage.
＊Low Switching noise.
＊High Current Capacity
＊Guarantee Reverse Avalanche.
＊Guard-Ring for Stress Protection.
＊Low Power Loss & High efficiency.
＊150℃ Operating Junction Temperature
＊Low Stored Charge Majority Carrier Conduction.
＊Plastic Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
＊ESD: 8KV(Min.) Human-Body Model
＊In compliance with EU RoHs 2002/95/EC directives
1N5817 thru 1N5819
SCHOTTKY BARRIER
RECTIFIERS
1.0 AMPERES
20-40 VOLTS
DO-41
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current
(Surge applied at rate load conditions
half-wave, single phase,60Hz )
Operating and Storage Junction
Temperature Range
Symbol 1N5817 1N5818 1N5819
VRRM
VRWM
20
30
40
VR
Unit
V
VR(RMS)
14
21
28
V
IO
1.0
A
IFSM
25
A
TJ , TSTG
-65 to +150
℃
ELECTRIAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
(IF =1.0 Amp)
(IF =3.0 Amp)
Maximum Instantaneous Reverse Current
(Rated DC Voltage, TC = 25℃)
(Rated DC Voltage, TC = 125℃)
Maximum Thermal Resistance Junction to
Case
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
Symbol 1N5817 1N5818 1N5819 Unit
VF
0.45
0.55
0.60
V
0.75
0.87
0.90
IR
0.5
mA
10
RθJC
60
oC/W
CP
90
80
pF
MILLIMETERS
DIM
MIN MAX
A
2.00 2.70
B 25.40
---
C
4.10 5.20
D
0.70 0.90
CASE---
Transfer molded
plastic
OLARITY---
Cathode indicated
polarity band
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