1N5818W 查看數據表（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd

零件编号

产品描述 (功能)

生产厂家

1N5818W

SCHOTTKY BARRIER DIODE

Sangdest Microelectronic (Nanjing) Co., Ltd 

Technical Data

Data Sheet N1756, Rev. -

1N5817W-1N5819W

SCHOTTKY BARRIER DIODE

Features:

• Metal silicon junction, majority carrier conduction

• Guarding for overvoltage protection

• Low power loss, high efficiency

• High current capability

• Low forward voltage drop

• High surge capability

• For use in low voltage, high frequency inverters,

free wheeling, and polarity protection applications

Mechanical Data:

• Case: SOD-123FL molded plastic body

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: Color band denotes cathode end

• Mounting Position: Any

Mechanical Dimensions: In mm/Inches

1N5817W-1N5819W

Green Products

Symbol

A

B

C

D

E

G

Millimeters

Min Max

3.55 3.85

2.60 2.90

1.75 1.95

0.90 1.40

0.70 1.20

0.25

-

Inches

Min Max

0.140

0.102

0.152

0.114

0.069 0.077

0.035 0.055

0.028 0.047

0.010

-

SOD-123FL

• China - Germany - Korea - Singapore - United States •

• http://www.smc-diodes.com - sales@ smc-diodes.com •

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