1N5818W 查看數據表（PDF） - Sangdest Microelectronic (Nanjing) Co., Ltd

零件编号

产品描述 (功能)

生产厂家

1N5818W

SCHOTTKY BARRIER DIODE

Sangdest Microelectronic (Nanjing) Co., Ltd 

Technical Data

Data Sheet N1756, Rev. -

1N5817W-1N5819W

Green Products

Ordering Information:

Device

1N5817W-1N5819W

Package

SOD-123FL(Pb-Free)

Shipping

3000pcs / reel

For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specification.

Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified

Parameter

Marking code

Symbol

1N5817W 1N5818W 1N5819W

12A

13A

14A

Unit

Maximum repetitive peak reverse voltage

Maximum DC blocking voltage

VRRM

20

VR

Maximum RMS voltage

VR(RMS)

14

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=90℃

IF(AV)

Peak forward surge current 8.3ms single half

sine-wave superimposed on rated load (JEDEC

IFSM

Method)

30

21

1.0

25.0

40

V

28

V

A

A

Maximum instantaneous forward voltage at 1.0A

VF

0.45

0.55

0.60

V

Maximum DC reverse current TA=25°C

At rated DC blocking voltage TA=100°C

Typical junction capacitance (Note 1)

Typical thermal resistance (Note 2)

Operating junction and storage temperature

range

IR

CJ

RΘJA

TJ, TSTG

0.5

10.0

110

115

-55 to +125

mA

pF

°C/W

°C

Note: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

2. Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas

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• http://www.smc-diodes.com - sales@ smc-diodes.com •

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