1N5817W 查看數據表（PDF） - Jiangsu High diode Semiconductor Co., Ltd
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1N5817W Datasheet PDF : 3 Pages
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Features
● VR 20-40V
● IFAV 1A
Applications
● Rectifier
1N5817W THRU 1N5819W
SOT-23-3L Plastic-Encapsulate Diodes
Schottky Rectifier
SOT- 23 - 3 L
Marking Code: 1N5817W: SJ
1N5818W: SK
1N5819W: SL
Item
Symbol Unit
Conditions
17W
Repetitive Peak Reverse Voltage VRRM
V
20
Maximum RMS Voltage
VRMS
V
14
Average Forward Current
IF(AV)
A
60Hz Half-sine wave, Resistance
load, Ta=75℃
Surge(Non-repetitive)Forward
Current
IFSM
A
60Hz Half-sine wave,1 cycle,
Ta=25℃
Junction Temperature
TJ
℃
Storage Temperature
TSTG
℃
Power Dissipation
P tot
mW
1N58
18W
30
21
19W
40
28
1.0
15
-55~+150
-55 ~ +150
450
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Item
Symbol Unit
Test Condition
Peak Forward
Voltage
Peak Reverse
Current
Thermal
Resistance(Typical)
VFM
IRRM1
IRRM2
RθJ-A
RθJ-L
V
mA
℃/W
IFM=1.0A
VRM=VRRM
Ta=25℃
Ta=125℃
Between junction and ambient
Between junction and lead
17W
0.45
1N58
18W
19W
0.55
1.0
10
50
15
High Diode Semiconductor
1
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