BUV28 查看數據表（PDF） - SavantIC Semiconductor

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BUV28

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

BUV28

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=30m A ;IB=0

VCEsat-1 Collector-emitter saturation voltage IC=3A ;IB=0.3 A

VCEsat-2 Collector-emitter saturation voltage IC=6A; IB=0.6A

VBEsat

Base-emitter saturation voltage

IC=6A; IB=0.6A

ICBO

Collector cut-off current

IEBO

Emitter cut-off current

Switching times resistive load

VCB =300V;IE=0

VEB=5V; IC=0

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=5A;VCC=150V

IB1=-IB1=0.5A;

MIN TYP. MAX UNIT

200

V

0.7

V

1.5

V

2.0

V

1.0

mA

1.0

mA

1.0

ms

1.5

µs

0.3

µs

2

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